Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET. 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 11 maio 2024.APA
Sonnenberg, V., & Martino, J. A. (1997). Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET. In Proceedings. Itajubá: SBMICRO/EFEI.NLM
Sonnenberg V, Martino JA. Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET. Proceedings. 1997 ;[citado 2024 maio 11 ]Vancouver
Sonnenberg V, Martino JA. Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET. Proceedings. 1997 ;[citado 2024 maio 11 ]